Notice ID: 69d293076504440f8274f4d10077cc49Special Notice
Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer
Responses closed . Full description on SAM.gov.
Overview
- Response deadline
- 4:00 PM CDT
- Posted
- October 13, 2026
- Notice type
- Special Notice
- NAICS
- 334413: Semiconductor and Related Device Manufacturing
- Agency
- National Aeronautics and Space Administration
Notice details
- Place of performance
- Cleveland, Ohio, 44135
- PSC
- 5961: SEMICONDUCTOR DEVICES AND ASSOCIATED HARDWARE
- Last updated
- Oct 28, 2026
- First published
- Last updated on SAM.gov
Identifiers
- Solicitation number
- 80NSSC27946811Q
- Notice ID
- 69d293076504440f8274f4d10077cc49
Description
NASA/NSSC has a requirement for Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer. See attached SOW for full details of the requirement.
VENDORS MUST REFERENCE THE NOTICE ID WHEN SUBMITTING A CAPABILITY STATEMENT.
NOTE: Quotes received in response to this notice will NOT be considered and will not be evaluated by
NASA’s Technical End User Team. We are currently only requesting Capability Statements.
Award Overview
Contacts
Contracting Officer
Primary Contact
Lindsey McLellan
Secondary Contact
Karen Artis
Documents
Lifecycle
- 1Version 1Special NoticeCurrent
Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer
Similar Opportunities
Additional Details
Solicitation Number
80NSSC27946811Q
Archive Date
Oct 31, 2026
Office Address
US