Notice ID: 68ae1bb1385c408ea714a38ec1a30b49SolicitationArchived
Dry etching of Combined Gallium Nitride Epitaxial Layer and Silicon Carbide Substrate
Archived on July 25, 2026. Original response deadline: . Full description on SAM.gov.
Overview
- Response deadline
- 8:00 AM CDT
- Posted
- July 6, 2026
- Notice type
- Solicitation
- Set-aside
- No Set aside used
- NAICS
- 334413: Semiconductor and Related Device Manufacturing
- Agency
- National Aeronautics and Space Administration
Notice details
- Office
- NASA SHARED SERVICES CENTER
- PSC
- AJ12: R&D- GENERAL SCIENCE/TECHNOLOGY: PHYSICAL SCIENCES (APPLIED RESEARCH/EXPLORATORY DEVELOPMENT)
- Last updated
- Oct 28, 2026
- First published
- Last updated on SAM.gov
Identifiers
- Solicitation number
- 80NSSC26936816Q
- Notice ID
- 68ae1bb1385c408ea714a38ec1a30b49
Description
See the attached SOW.
All correspondence should reference ID# to ensure visibility.
*PLEASE NOTE* THIS IS NOT A REQUEST FOR QUOTES. ANY PRICE OFFERS RECIEVED WILL NOT BE REVIEWED / ACCEPTED AT THIS TIME. A price quote alone generally does not provide sufficient information to evaluate a vendor's technical capability.
Award Overview
Contacts
Contracting Officer
Primary Contact
Monica Wilson
Documents
Files (1)
- Download
SATPC0041564 Tab 04 4 SOW.pdf
620 KBAdded in Solicitation version 3Posted
Lifecycle
- 3Version 3SolicitationArchivedCurrent
Dry etching of Combined Gallium Nitride Epitaxial Layer and Silicon Carbide Substrate
Similar Opportunities
Additional Details
Solicitation Number
80NSSC26936816Q
Archive Date
Jul 25, 2026
Office Address
STENNIS SPACE CENTER, MS, 39529